- • High insulation, resistivity: 1011~1012 Ohm.m
- • High hardness, Vickers hardness: ≥615kgf/mm2
- • Small expansion coefficient: ≤38*10-7/°C @ 50C~380C
- • High dimensional stability: TTV≤2um, process temperature: 500°C
- • High flatness: roughness ≤0.5nm
- • High optical performance: ≥90% @λ: 380 nm~780 nm
- • Ultra-low insertion loss (Insertion Loss)
Glass material properties
• Glass TFT & LTPS production capacity is sufficient, with yield >98%
• Engineering capabilities, L/S: 2um/2um
• Diversification of metal materials: Al, Mo, Cu, Ti, Ag…
• The electron mobility of LTPS can reach 50-200 cm2/VS, and glass-based CMOS devices have been put into mass production
• Large-scale mass production of ultra-thin glass (UTG), glass thickness 25~150um
• Through glass via (TGV) is gradually maturing, with TGV aspect ratio >20:1, pore diameter <50um, and pore density>105cm2
• 515mm*510mm ultra-fine multi-layer circuit processing capabilities
• Engineering capabilities, L/S: 2um/2um
• Diversification of metal materials: Al, Mo, Cu, Ti, Ag…
• The electron mobility of LTPS can reach 50-200 cm2/VS, and glass-based CMOS devices have been put into mass production
• Large-scale mass production of ultra-thin glass (UTG), glass thickness 25~150um
• Through glass via (TGV) is gradually maturing, with TGV aspect ratio >20:1, pore diameter <50um, and pore density>105cm2
• 515mm*510mm ultra-fine multi-layer circuit processing capabilities
